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Anomalous photoresponse of GaN x-ray Schottky detectors
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10.1063/1.3141818
/content/aip/journal/jap/105/11/10.1063/1.3141818
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/11/10.1063/1.3141818
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark current as a function of bias in two Schottky diodes with extreme electrical characteristics. All measured diodes have characteristics in between these two diodes.

Image of FIG. 2.
FIG. 2.

Photocurrent transient measured before, under, and after illumination with a halogen lamp. The applied reverse voltage is .

Image of FIG. 3.
FIG. 3.

Photocurrent transient measured for two levels of incident x ray power, and (corresponding to currents of 10 and on the x-ray tube, respectively). The applied reverse voltage is .

Image of FIG. 4.
FIG. 4.

Experimental and calculated x-ray photocurrents at saturation as a function of the incident x-ray incident power. The power is expressed in terms of the current, in mA, in the x-ray tube. The applied reverse voltage is .

Image of FIG. 5.
FIG. 5.

Experimental (solid line) and calculated (dashed line) transients of photocurrent under a constant x-ray illumination and with the additional illumination by visible/UV light which is turned on and off at the indicated times, respectively. The applied reverse voltage is .

Image of FIG. 6.
FIG. 6.

Photocurrent as a function of the reverse bias. The data are experimental (red trace and dots) and calculated (black trace).

Image of FIG. 7.
FIG. 7.

Normalized photocurrent transient calculated for two levels of the x-ray incident power, and , at the x-ray tube, respectively.

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/content/aip/journal/jap/105/11/10.1063/1.3141818
2009-06-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous photoresponse of GaN x-ray Schottky detectors
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/11/10.1063/1.3141818
10.1063/1.3141818
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