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Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates
2.O. G. Schmidt, A. Rastelli, G. S. Kar, R. Songmuang, S. Kiravittaya, M. Stoffel, U. Denker, S. Stufler, A. Zrenner, D. Grutzmacher, B. Y. Nguyen, and P. Wennekers, Physica E (Amsterdam) 25, 280 (2004).
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9.D. Grutzmacher, T. Fromherz, C. Dais, J. Stangl, E. Muller, Y. Ekinci, H. H. Solak, H. Sigg, R. T. Lechner, E. Wintersberger, S. Birner, V. Holy, and G. Bauer, Nano Lett. 7, 3150 (2007).
11.V. Auzelyte, C. Dais, P. Farquet, D. Grutzmacher, L. J. Heyderman, F. Luo, S. Olliges, C. Padeste, P. K. Sahoo, T. Thomson, A. Turchanin, C. David, and H. H. Solak, J. Micro/Nanolith. MEMS MOEMS 8, 021204 (2009).
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SiGe quantum dots are proposed as building blocks for future Si device technology. However, in order to exploit the full potential of SiGe islands, it is necessary to control their positioning and size on a nanometer length. This is achieved by templated self-assembly, which combines substrate patterning and subsequent epitaxy. In this paper we report on the evolution of SiGe islands on patterned substrates under consideration of small template variations and postgrowth annealing. The impact of the structural variations on the optical properties of the islands is investigated by photoluminescence measurements.
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