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In this invited contribution at the 29th International Conference on the Physics of semiconductors (ICPS 2008), we review two examples of solid-catalytic nanowire (NW) growth in parallel comparisons to the NW growth from the eutectic liquid catalyst. First, we demonstrated the Cu-catalyzed Ge NW growth using vapor precursor at , which is far below the Cu–Ge eutectic temperature of , with a relatively uniform diameter distribution directly templated from that of the catalysts. We provide evidence that the formation of solid catalysts and Gediffusion across the catalysts are responsible for such low-temperature growth of Ge NWs in a size-deterministic manner. Second, we show the spontaneous silicidation of NWs on continuous Ni bulks using vapor precursor at . This growth is particularly marked in that NWs are formed in a self-organized manner without employing the nanocluster catalysts. We discuss this spontaneous growth of NWs within the frame of the nucleation kinetics in the low supersaturation limit in analogous with the earlier examples of the vapor-condensation at the low vapor pressures.


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