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Publisher's Note: “First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the stack” [J. Appl. Phys. 105, 061603 (2009)]
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1.P. Broqvist, A. Alkauskas, J. Godet, and A. Pasquarello, J. Appl. Phys. 105, 061603 (2009).
http://dx.doi.org/10.1063/1.3055347
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2.M. J. Caldas and N. Studart, J. Appl. Phys. 105, 122301 (2009).
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/content/aip/journal/jap/105/12/10.1063/1.3134523
2009-06-18
2014-09-30

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Scitation: Publisher's Note: “First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack” [J. Appl. Phys. 105, 061603 (2009)]
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3134523
10.1063/1.3134523
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