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Publisher's Note: “First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the stack” [J. Appl. Phys. 105, 061603 (2009)]
1.P. Broqvist, A. Alkauskas, J. Godet, and A. Pasquarello, J. Appl. Phys. 105, 061603 (2009).http://dx.doi.org/10.1063/1.3055347
2.M. J. Caldas and N. Studart, J. Appl. Phys. 105, 122301 (2009).
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