Scanning electron microscope (SEM) picture of the device cross section close to the drain.
Transfer (a) and output (b) current voltage characteristics of TFT with .
Noise spectra for transistor with at different gate voltages. Drain voltage . Dashed lines show the slope.
Dependences of noise on drain current at constant gate voltage. .
Dependence of the relative spectral noise density on the gate voltage swing. The inset shows the dependence of the noise on the gate length. , , and .
Trap density as a function of the gate voltage swing calculated for two TFTs.
Trap density extracted from the noise measurements for TFTs and crystalline MOSFETs (data from Refs. 2–4, 6, 12, and 17–23).
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