1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Low frequency noise in amorphous silicon thin film transistors with gate dielectric
Rent:
Rent this article for
USD
10.1063/1.3147928
/content/aip/journal/jap/105/12/10.1063/1.3147928
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3147928
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron microscope (SEM) picture of the device cross section close to the drain.

Image of FIG. 2.
FIG. 2.

Transfer (a) and output (b) current voltage characteristics of TFT with .

Image of FIG. 3.
FIG. 3.

Noise spectra for transistor with at different gate voltages. Drain voltage . Dashed lines show the slope.

Image of FIG. 4.
FIG. 4.

Dependences of noise on drain current at constant gate voltage. .

Image of FIG. 5.
FIG. 5.

Dependence of the relative spectral noise density on the gate voltage swing. The inset shows the dependence of the noise on the gate length. , , and .

Image of FIG. 6.
FIG. 6.

Trap density as a function of the gate voltage swing calculated for two TFTs.

Image of FIG. 7.
FIG. 7.

Trap density extracted from the noise measurements for TFTs and crystalline MOSFETs (data from Refs. 2–4, 6, 12, and 17–23).

Loading

Article metrics loading...

/content/aip/journal/jap/105/12/10.1063/1.3147928
2009-06-16
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3147928
10.1063/1.3147928
SEARCH_EXPAND_ITEM