Schematic illustration of the process for fabricating electronics with noncoplanar mesh designs on a complaint substrate.
A scanning electron micrograph of a noncoplanar silicon mesh structure (island: , 50 nm thick; interconnect: , 50 nm thick) on a PDMS substrate.
Schematic diagram of mechanics model for the interconnect region of a noncoplanar mesh structure.
The maximum strain in the interconnects vs the prestrain for different interconnect lengths.
Distribution of the strain in islands when the interconnect relaxes from 20 to .
Stretchability and compressibility vs the prestrain for the noncoplanar mesh design (island: , 50 nm thick; interconnect: , 50 nm thick) when the failure strains of interconnect and island are 1%.
Stretchability and compressibility vs the length of interconnect for the noncoplanar mesh design when the prestrain is 50%. The dot on the curve for compressibility separates the failure of interconnect or island (left of the dot) from the contact of neighbor islands (right of the dot).
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