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Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
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Image of FIG. 1.
FIG. 1.

Micro-Raman spectra of a free-standing GaN NW recorded in quasibackscattering geometry for excitation laser power of 0.25 mW near the sample surface. The inset shows a cross-sectional SEM image of as-grown GaN NWs on Si (111) substrate.

Image of FIG. 2.
FIG. 2.

Laser power dependent Raman spectra of GaN NW (a) Raman shift of the phonon mode and (b) coupled LO phonon-plasmon mode.

Image of FIG. 3.
FIG. 3.

Linewidth and peak positions of and modes as a function of lattice temperature. (a) FWHM of and modes and (b) peak position of and modes.

Image of FIG. 4.
FIG. 4.

The electron mobility as a function of laser induced temperature in comparison with data extracted from literature for GaN bulk [31,32] and NWs [18]. The inset shows Raman spectrum of coupled LO phonon-plasmon mode of free-standing GaN NWs for 1 mW (the gray line is the fitting curve by line shape analysis and open circle is the experimental curve).

Image of FIG. 5.
FIG. 5.

Micro-Raman spectra of vertically aligned undoped and doped GaN NWs recorded in backscattering geometry for excitation laser power of 3.65 mW. The inset shows a fitting curve for Si doped GaN NWs by line shape analysis.


Generic image for table
Table I.

Typical phonon frequencies and symmetries (for 0.25 mW) observed by Raman scattering for free-standing hexagonal GaN NWs.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires