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Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films
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10.1063/1.3151688
/content/aip/journal/jap/105/12/10.1063/1.3151688
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3151688
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron micrograph of SiNC films, (b) TEM image of one nanocrystal, and (c) device structure measured in this work.

Image of FIG. 2.
FIG. 2.

(a) Voltage dependence of current density at various temperatures. (b) Plots of dependence of conductance from 220 to 300 K.

Image of FIG. 3.
FIG. 3.

(a) Square root of voltage dependence of for devices fabricated with Au as electrodes from 220 to 300 K. (b) Temperature dependence of . Here, is obtained from (a) by extrapolating high filed to .

Image of FIG. 4.
FIG. 4.

Temperature dependence of conductance at different applied voltages.

Image of FIG. 5.
FIG. 5.

(a) Band diagram of structure at . (b) TEM image of two connected SiNCs and (c) dependence of conductance after annealing treatment.

Image of FIG. 6.
FIG. 6.

Temperature dependence of for samples (a) and (b).

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/content/aip/journal/jap/105/12/10.1063/1.3151688
2009-06-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3151688
10.1063/1.3151688
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