(a) Scanning electron micrograph of SiNC films, (b) TEM image of one nanocrystal, and (c) device structure measured in this work.
(a) Voltage dependence of current density at various temperatures. (b) Plots of dependence of conductance from 220 to 300 K.
(a) Square root of voltage dependence of for devices fabricated with Au as electrodes from 220 to 300 K. (b) Temperature dependence of . Here, is obtained from (a) by extrapolating high filed to .
Temperature dependence of conductance at different applied voltages.
(a) Band diagram of structure at . (b) TEM image of two connected SiNCs and (c) dependence of conductance after annealing treatment.
Temperature dependence of for samples (a) and (b).
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