1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Self-assembled chains of single layer InP/(In,Ga)P quantum dots on GaAs (001)
Rent:
Rent this article for
USD
10.1063/1.3154023
/content/aip/journal/jap/105/12/10.1063/1.3154023
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3154023
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM micrographs of four samples: the scale for each micrograph is , (a) 252 nm thick layer grown at , the height contrast is between 0 and 5 nm, (b) 230 nm thick layer grown at , (c) same growth conditions as (a) but with an extra 0.3 ML thick InP layer for the formation of QDs, and the height contrast is between 0 and 6 nm, (d) same growth conditions as (b) with an extra 0.3 ML thick InP layer.

Image of FIG. 2.
FIG. 2.

(a) Coplanar x-ray diffraction in the vicinity of the GaAs 004 reflection for the samples with and without undulations. (b) Grazing incidence x-ray diffraction in the vicinity of the GaAs 220 in-plane reciprocal lattice point for the sample with undulations. The two peaks P1 and P2 are caused by ordering of the undulations along the [110]-direction. Their position with respect to the GaAs substrate reflection (S) indicates a horizontal strain within the undulations of about .

Image of FIG. 3.
FIG. 3.

PL data for the sample in Fig. 1(c). The emission at 658 nm is from QDs and the emission at 632 nm is from the (In,Ga)P buffer layer. In the inset graph, PL measurements for the samples in Figs. 1(a) and 1(b) are shown. The peak at 637 nm is from the sample without stripes (black) (exposure time: 1 s, excitation power: 0.1 mW) and the one at 647 nm is from the sample with stripes (red) (exposure time: 10 s, excitation power: 0.005 mW).

Loading

Article metrics loading...

/content/aip/journal/jap/105/12/10.1063/1.3154023
2009-06-24
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-assembled chains of single layer InP/(In,Ga)P quantum dots on GaAs (001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/12/10.1063/1.3154023
10.1063/1.3154023
SEARCH_EXPAND_ITEM