1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Metal-insulator transition in epitaxial films
Rent:
Rent this article for
USD
10.1063/1.3065989
/content/aip/journal/jap/105/2/10.1063/1.3065989
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3065989

Figures

Image of FIG. 1.
FIG. 1.

Sample with low density of structural defects (AZ-31). Left panel: x-ray topograph [ radiation, (311) reflection]. Right panel: schematic of twin boundaries.

Image of FIG. 2.
FIG. 2.

Sample with high twin density (AZ-8). Left panel: x-ray topograph [ radiation, (311) reflection]. Right panel: schematic of twin boundaries.

Image of FIG. 3.
FIG. 3.

Dependence of the sample resistance (AZ-8) on the magnetic field. (a) Field is parallel to the plane of the epitaxial layer and (b) field is perpendicular to the heterojunction plane. Current through the sample, 1 mA; .

Image of FIG. 4.
FIG. 4.

Temperature dependences of the resistance of samples with different doping levels, : AZ-19, ; AZ-31, ; AL-27, .

Image of FIG. 5.
FIG. 5.

Temperature dependences of the resistance of AL-27 sample at low temperatures.

Image of FIG. 6.
FIG. 6.

Dependence of the resistance of AL-27 sample on magnetic field for two temperatures. Field is perpendicular to the heterojunction plane.

Tables

Generic image for table
Table I.

Parameters of the investigated samples.

Loading

Article metrics loading...

/content/aip/journal/jap/105/2/10.1063/1.3065989
2009-01-23
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-insulator transition in n-3C-SiC epitaxial films
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3065989
10.1063/1.3065989
SEARCH_EXPAND_ITEM