1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia
Rent:
Rent this article for
USD
10.1063/1.3066279
/content/aip/journal/jap/105/2/10.1063/1.3066279
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3066279

Figures

Image of FIG. 1.
FIG. 1.

Variation of the electronic and nuclear energy losses vs the depth in YSZ for 940 MeV Pb irradiation (histograms), and depth distribution of Pb ions (circles: arbitrary units) (Ref. 23). The depths probed by RBS and XRD are indicated for comparison.

Image of FIG. 2.
FIG. 2.

RBS spectra recorded in random and -axial (open symbols) directions on YSZ single crystals irradiated with 940 MeV Pb ions at increasing fluences (a) or with various swift heavy ions at a fluence of (b). Crosses: virgin crystal. Analyzing particles: 1.6 MeV ions. Lines are fits to RBS data with the MCCHASY Monte Carlo code (Refs. 26 and 27).

Image of FIG. 3.
FIG. 3.

Depth distributions of the damage accumulated in the Zr sublattice of YSZ single crystal irradiated with 940 MeV Pb ions at increasing fluences (a) or with various swift heavy ions at a fluence of (b).

Image of FIG. 4.
FIG. 4.

Variation of vs the ion fluence for YSZ single crystals irradiated with various swift heavy ions. Lines are fits to the data with Eq. (1).

Image of FIG. 5.
FIG. 5.

(a) TEM micrograph obtained from a YSZ single crystal irradiated with 940 MeV Pb ions at a fluence of . (b) Higher magnification image of the near-surface ion tracks shown in (a), obtained using overfocused condition. (c) Image of the bulk region, obtained with the diffraction vector excited, showing isolated dislocation loops along Pb ion trajectories.

Image of FIG. 6.
FIG. 6.

(a) TEM micrograph obtained from the surface region of a YSZ single crystal irradiated with 940 MeV Pb ions at a fluence of . (b) Image of dislocation loops and larger dislocations in the bulk region, image with the diffraction vector excited.

Image of FIG. 7.
FIG. 7.

(a) AFM micrograph obtained from a YSZ single crystal irradiated with 940 MeV Pb ions at a fluence of . (b) Profilometry of the surface of the crystal obtained from the micrograph in (a). (c) Distribution of the diameters of the hillocks formed upon irradiation.

Image of FIG. 8.
FIG. 8.

XRD scans recorded for the indicated reflections on a YSZ crystal before and after irradiation with 940 MeV Pb ions at a fluence of . The doublets resolved before irradiation are due to the resolution of the and reflections.

Image of FIG. 9.
FIG. 9.

XRD -scans recorded for the indicated reflections on a YSZ crystal before and after irradiation with 940 MeV Pb ions at a fluence of (note the logarithmic scale for intensity).

Image of FIG. 10.
FIG. 10.

Variation of the lattice parameter vs the ion fluence in YSZ irradiated with 940 MeV Pb ions.

Image of FIG. 11.
FIG. 11.

Variation of the size of nanodomains vs the ion fluence in YSZ irradiated with 940 MeV Pb ions. The analysis of XRD data is based on the Langford method.

Image of FIG. 12.
FIG. 12.

Variation of the integral breadths vs the Bragg angle for various irradiation fluences in YSZ irradiated with 940 MeV Pb ions, based on rocking-curve results such as shown in Fig. 9.

Image of FIG. 13.
FIG. 13.

Variation of the disorientation angle vs the ion fluence in YSZ irradiated with 940 MeV Pb ions, based on rocking-curve results such as shown in Fig. 9.

Image of FIG. 14.
FIG. 14.

Variation of the density of dislocations vs the ion fluence in YSZ irradiated with 940 MeV Pb ions. Filled circles represent a random distribution of dislocations [based on Eq. (8)]; open circles represent piled-up dislocations [based on Eq. (7)].

Image of FIG. 15.
FIG. 15.

(a) RBS spectra recorded in random (filled circles) and -axial (open circles) directions on a YSZ single crystal irradiated with 940 MeV Pb at . Crosses: virgin crystal. Analyzing particles: 3.07 MeV ions. Lines are fits to RBS data with the MCCHASY Monte Carlo code (Refs. 26 and 27). [(b) and (c)] Influence of the parameters and on the Monte Carlo simulations of the aligned spectrum.

Image of FIG. 16.
FIG. 16.

Angular scans recorded across the axis on a virgin YSZ single crystal (a) and on a YSZ single crystal irradiated with 940 MeV Pb at (b). Filled squares: Zr sublattice; open circles: O sublattice. Lines are fits to RBS data with the MCCHASY Monte Carlo code (Refs. 26 and 27).

Image of FIG. 17.
FIG. 17.

Variation of the track radius as a function of the electronic energy loss in YSZ single crystals irradiated with swift heavy ions. The lines are fit to the data in the framework of the thermal spike model (Ref. 43).

Tables

Generic image for table
Table I.

Irradiation parameters. The values of the ion projected range and of the electronic and nuclear stopping powers are calculated with the TRIM code (Ref. 23). and are averaged over the first micrometer.

Generic image for table
Table II.

Parameters extracted from the fits to RBS/C data using Eqs. (1) and (2).

Generic image for table
Table III.

Values of and extracted from the analysis of XRD and RBS/C data for a YSZ crystal irradiated with 940 MeV Pb at a fluence of .

Loading

Article metrics loading...

/content/aip/journal/jap/105/2/10.1063/1.3066279
2009-01-22
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3066279
10.1063/1.3066279
SEARCH_EXPAND_ITEM