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Quantum simulation of noise in silicon nanowire transistors with electron-phonon interactions
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10.1063/1.3068346
/content/aip/journal/jap/105/2/10.1063/1.3068346
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3068346
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure of the silicon nanowire transistor.

Image of FIG. 2.
FIG. 2.

Schematic of electron transport mechanisms.

Image of FIG. 3.
FIG. 3.

(a) vs and (b) vs characteristics.

Image of FIG. 4.
FIG. 4.

(a) Intensity of the nonlocal current fluctuation, (b) the drain transfer function, and (c) the drain noise contributions at a bias of , .

Image of FIG. 5.
FIG. 5.

(a) Intensity of the nonlocal current fluctuation, (b) the drain transfer function, and (c) the drain noise contributions at a bias of , .

Image of FIG. 6.
FIG. 6.

Gate bias dependence of drain noise power at equilibrium.

Image of FIG. 7.
FIG. 7.

Drain bias dependence of drain noise power (a) with and (b) with .

Image of FIG. 8.
FIG. 8.

Gate bias dependence of the Fano factor with .

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/content/aip/journal/jap/105/2/10.1063/1.3068346
2009-01-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum simulation of noise in silicon nanowire transistors with electron-phonon interactions
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3068346
10.1063/1.3068346
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