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Phase mapping of domain kinetics in lithium niobate by digital holographic interferometry
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10.1063/1.3068363
/content/aip/journal/jap/105/2/10.1063/1.3068363
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3068363
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic diagram of the measurement principle by digital holographic interferometry. The two antiparallel domain states are presented as virginal state and reversed state , respectively. The spontaneous polarizations are labeled as and , respectively. The uniform external electric field is applied and the different phase retardations are obtained as and , respectively. is the longitudinal dimension of reversed domain and is the thickness of the crystal wafer.

Image of FIG. 2.
FIG. 2.

The schematic diagram of experimental device within a Mach–Zehnder interferometer. BS: beam splitter; SF: spatial filter; CL: collimating lens; L: lens; and CCD: charge coupled device.

Image of FIG. 3.
FIG. 3.

The selected sequence of reconstructed three-dimensional wave-field phase distributions during the individual domain nucleation and growth in the congruent crystal. The eight frames labeled as 3(a)–3(h) show the nucleation and growth of individual 180° domain microstructure in the wafer at different times after the application of the steady voltage (at ). The times (in seconds) corresponding to each frame are (a) 2, (b) 4, (c) 10, (d) 14, (e) 16, (f) 20, (g) 26, and (h) 30. The polarization axis is along the axis.

Image of FIG. 4.
FIG. 4.

The sequence of reconstructed two-dimensional wave-field phase distributions during the individual domain nucleation and growth in the near stoichiometric crystal. The eight frames labeled as 6(a)–6(h) show the nucleation and growth of individual 180° domain microstructure in the wafer at different times after the application of the steady voltage (at ). The times (in seconds) corresponding to each frame are (a) 3, (b) 4, (c) 6, (d) 10, (e) 12, (f) 13, (g) 14, and (h) 17. The polarization axes are normal to the image plane.

Image of FIG. 5.
FIG. 5.

The diagram of the domain dimension variation in the longitudinal direction and the lateral direction with the increase of poling time in the congruent crystal.

Image of FIG. 6.
FIG. 6.

The diagram of the domain dimension variation in the longitudinal direction and the lateral direction with the increase in poling time in the near stoichiometric crystal.

Image of FIG. 7.
FIG. 7.

The schematic diagram of individual domain nucleation and growth. The two antiparallel domain states are presented as virginal state and reversed state , respectively. The spontaneous polarizations are labeled as and , respectively. : the applied electric field; : the longitudinal dimension of reversed domain; and : the lateral dimension of reversed domain.

Image of FIG. 8.
FIG. 8.

The selected sequence of reconstructed three-dimensional wave-field phase distributions during the domain wall motion in the congruent crystal. The six frames labeled as 8(a)–8(f) show the 180° domain wall motion in the wafer at different times after the application of the steady voltage (at ). The times (in seconds) corresponding to each frame are (a) 12, (b) 17, (c) 19, (d) 29, (e) 31, (f) 38. The two antiparallel domain states are presented as virginal state and reversed state , respectively. The spontaneous polarizations are labeled as and , respectively. The ridge-shape phase distributions appear adjacent to the polarization gradient at the 180° domain walls, which are indicated as ridge- and ridge-, respectively, by the arrows from Figs. 8(a)–8(f).

Image of FIG. 9.
FIG. 9.

The selected sequence of reconstructed two-dimensional wave-field phase distributions after the high-speed domain wall motion in the congruent crystal. (a) corresponds to after the application of the steady voltage (at ), and (b) is 1 s apart from that. The direction of domain motion is indicated by the arrow. The original position of domain boundary is indicated by the dashed line in (a). The new position of domain boundary is indicated by the dashed line in (b).

Image of FIG. 10.
FIG. 10.

(a) The scanning line across the antiparallel domain along the axis. (b) The three-dimensional wave-field phase distributions after the high-speed domain wall motion in the congruent crystal. The residual phase region is indicated by the dashed line.

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/content/aip/journal/jap/105/2/10.1063/1.3068363
2009-01-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase mapping of domain kinetics in lithium niobate by digital holographic interferometry
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/2/10.1063/1.3068363
10.1063/1.3068363
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