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The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
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10.1063/1.3063698
/content/aip/journal/jap/105/3/10.1063/1.3063698
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/3/10.1063/1.3063698
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/content/aip/journal/jap/105/3/10.1063/1.3063698
2009-02-02
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/3/10.1063/1.3063698
10.1063/1.3063698
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