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Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
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10.1063/1.3074095
/content/aip/journal/jap/105/3/10.1063/1.3074095
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/3/10.1063/1.3074095
/content/aip/journal/jap/105/3/10.1063/1.3074095
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/content/aip/journal/jap/105/3/10.1063/1.3074095
2009-02-03
2015-01-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/3/10.1063/1.3074095
10.1063/1.3074095
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