The typical scanning electron images: (a) side view of the thermal emitter with multilayer. The thickness of is about 700 nm and the thickness of Si is about 300 nm. It is sandwiched between two 100 nm Ag films. (b) Top view of perforated hexagonal hole array with lattice constant and the diameter of hole is . (c) The sketch of our device is shown on the side view and (d) the measurement basis of our device is plotted on the top view.
(a) Reflectance spectra of PCs measured at angle of 12°. (b) Energy dispersion relation of PCs.
Reflectance spectra of (a) the coupling between SPP modes and 100 nm epilayer denoted as device A. (b) The resonant coupling between leakage modes of PC and SPP modes denoted as device B.
Energy dispersion relation along direction for (a) device A and (b) device B. (c) is a theoretical calculation of energy dispersion relation for SPP modes.
Thermal emission spectra of (a) device A, (b) device B, and (c) device without top Ag film layer (i.e., without SPP structure). Dot line shows the background emission spectrum at room temperature of before heating the device.
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