A schematic cross section of the pentacene-based OTFT with a PMMA gate dielectric.
Thickness of spin-coated PMMA films as function of spinning speed and solution concentration.
Atomic force microscope images of (a) 150 nm thick PMMA film spin coated onto a glass slide and (b) 30 nm thick pentacene film thermally evaporated on top of the PMMA.
Current density vs applied electric field for an Al/PMMA/Au structure. The PMMA film .
Schottky [ vs ] and Poole–Frenkel [ vs ] plots for an Al/PMMA/Au structure. The PMMA film .
Capacitance vs frequency characteristics of a spin-coated PMMA layer; .
Capacitance vs voltage characteristics, measured at 1 MHz and voltage scan rate of for Al/PMMA/pentacene/Au structure for two different thicknesses of PMMA. Pentacene .
(a) Output and (b) transfer characteristics with different thicknesses of PMMA. Inset: field-effect mobility as a function of the thickness of PMMA.
Possible leakage paths in (a) unpatterned pentacene OTFT and (b) patterned pentacene devices.
Optical micrograph of a patterned pentacene-based OTFT with PMMA gate dielectric (channel ; channel ).
(a) offset and (b) leakage currents in patterned and unpatterned pentacene OTFTs.
vs channel width:length ratio for pentacene OTFTs. The output characteristics are shown in the inset. . PMMA .
Output characteristics for OTFTs with the same channel width:length ratio but different channel lengths and widths. PMMA .
(a) Output and (b) transfer characteristics of a pentacene-based OTFT using PMMA as the gate dielectric. Channel ; channel .
Summary of pentacene/PMMA OTFT characteristics.
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