Pictures of the microreactor membrane after dielectric breakdown of the silicon nitride layer (a) cracks in the membrane; (b) zoom-in on the location where dielectric breakdown and subsequent hot spot formation occurred.
Cross-sectional view of Pt/Ta–silicon nitride–silicon structure for study on electrical behavior of silicon nitride at elevated temperatures.
-characteristics measured on 105 nm and 105 nm SiRN on -type silicon at room temperature (a) and for temperatures up to (b).
vs characteristics of 105 (up to ) and 200 nm (up to ) on -type silicon. The arrows indicate the voltage sweep direction (equal for all curves). The curves without temperature labels (at the right-hand side of the graph) are measured at 50 and (105 nm), and 20, 75, and (200 nm), respectively.
vs characteristics of 105 (up to ) and 215 nm (up to ) SiRN on -type silicon. The arrows indicate the voltage sweep direction (equal for all curves).
Electrical breakdown field as a function of temperature up to for and SiRN films deposited on and substrates.
Values of the parameters’ pre-exponential factor and the barrier height describing Frenkel–Poole conduction through two types of silicon nitride for various layer thicknesses and temperatures.
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