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Low temperature perovskite crystallization of highly tunable dielectric thick films deposited by ion beam sputtering on platinized silicon substrates
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10.1063/1.3080247
/content/aip/journal/jap/105/4/10.1063/1.3080247
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/4/10.1063/1.3080247
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

diffraction patterns of the BST thick films deposited on , measured at room temperature.

Image of FIG. 2.
FIG. 2.

Lattice parameter of the BST thick films, deduced from (200) diffraction peak, as a function of temperature, measured upon cooling.

Image of FIG. 3.
FIG. 3.

AFM micrographs of the surface morphology for the BST thick films with thickness of (a) and (b) . The scan area is for both.

Image of FIG. 4.
FIG. 4.

Dielectric constant as a function of the applied dc electric field for the BST thick films, measured at a frequency of 100 kHz and at 300 K.

Image of FIG. 5.
FIG. 5.

dc bias field dependence of the dielectric tunability for the BST thick films, measured at room temperature.

Image of FIG. 6.
FIG. 6.

Williamson–Hall plots for analysis of inhomogeneous strains in the BST thick films. The measurements on corresponding diffraction peaks were carried out at different temperatures.

Image of FIG. 7.
FIG. 7.

Temperature dependence of percent tunability with a dc bias field of 400 kV/cm, loss tangent with no dc bias, and figure of merit for the BST thick films, measured at 100 kHz. For comparison, the left-bottom inset shows the temperature dependence of figure-of-merit factor for a BST thin film with 100 nm in thickness.

Image of FIG. 8.
FIG. 8.

(a) Variations of leakage current density with the applied dc electric field up to 800 kV/cm for the BST thick films, measured at room temperature. (b) vs plots and linear fits for the films.

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/content/aip/journal/jap/105/4/10.1063/1.3080247
2009-02-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/4/10.1063/1.3080247
10.1063/1.3080247
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