diffraction patterns of the BST thick films deposited on , measured at room temperature.
Lattice parameter of the BST thick films, deduced from (200) diffraction peak, as a function of temperature, measured upon cooling.
AFM micrographs of the surface morphology for the BST thick films with thickness of (a) and (b) . The scan area is for both.
Dielectric constant as a function of the applied dc electric field for the BST thick films, measured at a frequency of 100 kHz and at 300 K.
dc bias field dependence of the dielectric tunability for the BST thick films, measured at room temperature.
Williamson–Hall plots for analysis of inhomogeneous strains in the BST thick films. The measurements on corresponding diffraction peaks were carried out at different temperatures.
Temperature dependence of percent tunability with a dc bias field of 400 kV/cm, loss tangent with no dc bias, and figure of merit for the BST thick films, measured at 100 kHz. For comparison, the left-bottom inset shows the temperature dependence of figure-of-merit factor for a BST thin film with 100 nm in thickness.
(a) Variations of leakage current density with the applied dc electric field up to 800 kV/cm for the BST thick films, measured at room temperature. (b) vs plots and linear fits for the films.
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