[(a)–(c)] Top-view AFM images of AlGaAs surfaces after Ga LDE at , , and as indicated. Profiles of typical deep nanoholes fabricated at (d) and (e) .
RHEED pattern [(a) and (b)] from the AlGaAs buffer before LDE , [(c) and (d)] after Ga LDE with , and [(e) and (f)] after annealing at . The respective azimuth is indicated in the figure.
[(a)–(e)] Top-view AFM images of AlGaAs surfaces after Ga LDE at and . The As pressure was varied as indicated. Arrow A indicates a typical large hill and arrow B a hillock. [(f)–(i)] Profiles of typical deep nanoholes fabricated at different as indicated. (j) Profiles of a typical hillock fabricated at , and (k) profiles of a typical hill fabricated at .
SEM image of a sample which was etched with Ga LDE at , , and . The sample was tilted by 60 in order to achieve a 3D view.
(a) 3D AFM image of a typical LDE nanohole with wall fabricated using Ga LDE at , , and . (b) Cross sectional sketch of a nanohole and wall with indicated diameter of the hole opening which is identical with the wall inner diameter, wall outer-diameter , hole depth , and height of the wall. (c) Symbols denote the measured wall height as function of the hole depth for various nanohole samples fabricated with In and Ga LDE. The lines represent calculation results assuming for In LDE and 0.24 for Ga LDE as is described in the text.
Schematic sketch of the different stages during LDE of nanoholes and wall formation.
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