(a) Schematic and top view SEM image of a GaAs substrate with SiO2 mask patterned through block copolymer lithography. (b) Schematic and top view SEM image of the substrate subsequent to pregrowth cleaning and mask removal.
(a) Schematic of MBE sample holder with variable temperature gradient. Top view SEM images at various growth temperatures: (b) (no deposition), (c) (selective growth), (d) (selective growth), and (e) (nonselective growth).
Schematic and top view SEM images of (a) nonselective growth with deposition on the mask and inside the pores before mask removal and (b) after mask removal.
Schematic and top view SEM images of (a) nanopatterned grown InAs QDs subsequent to template removal: Diameter= nm, density= and (b) SK QDs: Diameter= . nm, density=
(a) TEM and EDS line profile of nanopatterned grown QDs revealing subsurface nucleation of InAs. (White arrow in image indicates scan direction for line profile). HRTEM images of InAs QDs grown for (b) 387 and (c) 774 s, reveal the presence of twinning defects.
Homoepitaxial nanopatterned growth of GaAs QDs on GaAs: (a) top view SEM and (b) HRTEM images.
(a) PL curves of nanopatterned and SK QDs at 7.5 K. In the case of nanopatterned QDs, the PL intensity has been multiplied by 5. (b) Integrated PL intensities of nanopatterned and SK QDs as a function of temperature.
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