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Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors
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10.1063/1.3086271
/content/aip/journal/jap/105/5/10.1063/1.3086271
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/5/10.1063/1.3086271

Figures

Image of FIG. 1.
FIG. 1.

Subthreshold characteristics of a poly-Si TFT with channel thickness of (a) 30, (b) 50, and (c) 100 nm.

Image of FIG. 2.
FIG. 2.

Subthreshold characteristics of a poly-Si TFT with channel thickness of 50 nm before and after plasma treatment in for 1 h.

Image of FIG. 3.
FIG. 3.

Band diagrams of poly-Si TFTs with a thick poly-Si channel. (a) The FS results in electron trapping in the depletion regions. (b) In the BS period the trapped electrons are released mainly through the empty traps located in the neutral region (path 2).

Image of FIG. 4.
FIG. 4.

Band diagrams of poly-Si TFTs with a FD poly-Si channel. (a) The FS results in electron trapping in the depletion regions. (b) In the BS period, path 2 is blocked while path 1 is not efficient as the temperature is low. As a result the stored electrons remain in the channel until the gate voltage is sufficiently low to expel them.

Image of FIG. 5.
FIG. 5.

Band diagram in the depletion region parallel to the channel direction. Path 3 represents the release paths efficient only for electrons trapped in the tail states at the GBs.

Image of FIG. 6.
FIG. 6.

Transfer curves measured by applying gate voltages from −3 V to various maximum voltages ranging from 3 to 6 V. The BS curve depends on the maximum voltage applied in the FS curve.

Image of FIG. 7.
FIG. 7.

Transfer curves measured by applying gate voltages with various minimum voltages ranging from −5 to −1 V and maximum voltage of 6 V. The FS curve depends on the minimum voltage applied in the FS curve.

Image of FIG. 8.
FIG. 8.

Transfer curves measured at various temperatures.

Image of FIG. 9.
FIG. 9.

Activation energy extracted from the results shown in Fig. 8.

Image of FIG. 10.
FIG. 10.

DOS extracted using the FEC method. Major difference exists in the midgap region.

Tables

Generic image for table
Table I.

Trapped electron density in the channel estimated from the difference in and SS between the FS and BS transfer curves.

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/content/aip/journal/jap/105/5/10.1063/1.3086271
2009-03-04
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/5/10.1063/1.3086271
10.1063/1.3086271
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