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Strong plasmon absorption in InN thin films
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Image of FIG. 1.
FIG. 1.

XRD spectra of InN thin films having (a) lowest carrier concentration and (b) highest carrier concentration. The indicates the substrate peak due to the (0006) reflection. The small anomaly near 35° in panel (a) represents an instrumental error. (c) Cross-sectional SEM image of the InN/sapphire thin film with .

Image of FIG. 2.
FIG. 2.

HRTEM images of (a) the lowest carrier concentration film and (b) the highest carrier concentration film.

Image of FIG. 3.
FIG. 3.

RBS spectra highest carrier concentration thin film with a standard detector of 140° angle (red circle), 180° annular detector (blue square), and 30° annular detector (black triangle). Symbols are experimental spectra. The fit using the NDF simulation is shown as a line.

Image of FIG. 4.
FIG. 4.

Raman spectra of InN thin films with (a) lowest carrier concentration and (b) highest carrier concentration. The corresponds to the peaks from at 129, 303, and .

Image of FIG. 5.
FIG. 5.

Optical spectra of InN/Sap thin films (a) reflectance and (b) absorption spectra. Closed (open) symbols and dotted (dashed) lines show the experimental data and simulated spectrum for the films having a carrier concentration of . In Fig. 4(b) the jumps are due to grating changes at these wavelengths.

Image of FIG. 6.
FIG. 6.

(a) Measured and computed values for the optical absorption edge vs carrier concentration extracted from the plasmon resonance peak. (b) Normalized plot of vs (eV) plot for different InN/Sap thin films (arrows guiding corresponding values).


Generic image for table
Table I.

Growth parameters and physical properties of the films.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong plasmon absorption in InN thin films