XRD spectra of InN thin films having (a) lowest carrier concentration and (b) highest carrier concentration. The indicates the substrate peak due to the (0006) reflection. The small anomaly near 35° in panel (a) represents an instrumental error. (c) Cross-sectional SEM image of the InN/sapphire thin film with .
HRTEM images of (a) the lowest carrier concentration film and (b) the highest carrier concentration film.
RBS spectra highest carrier concentration thin film with a standard detector of 140° angle (red circle), 180° annular detector (blue square), and 30° annular detector (black triangle). Symbols are experimental spectra. The fit using the NDF simulation is shown as a line.
Raman spectra of InN thin films with (a) lowest carrier concentration and (b) highest carrier concentration. The corresponds to the peaks from at 129, 303, and .
Optical spectra of InN/Sap thin films (a) reflectance and (b) absorption spectra. Closed (open) symbols and dotted (dashed) lines show the experimental data and simulated spectrum for the films having a carrier concentration of . In Fig. 4(b) the jumps are due to grating changes at these wavelengths.
(a) Measured and computed values for the optical absorption edge vs carrier concentration extracted from the plasmon resonance peak. (b) Normalized plot of vs (eV) plot for different InN/Sap thin films (arrows guiding corresponding values).
Growth parameters and physical properties of the films.
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