Schematic of neutral-beam source we developed.
Schematic of different AR apertures: (a) AR10 and (b) AR2.
VUV intensities obtained with AR10 (Neutral beam) and AR2 apertures (Ion+UV/VUV photon).
Neutral beams and ion fluxes estimated from rise in surface temperature during irradiation. Incident energies of both neutral beams and ions are about 10 eV.
Surface temperature during irradiation.
Structures of ArF photoresist polymer and PAG we used. The base polymer was a polymethacrylate copolymer of -GBLMA, MAMA, and HAdMA, which were, respectively, the lactone, protecting, and polar groups. The PAG was TPS-OTf.
Etching rates for ArF photoresist films.
SPM images showing the surface roughness of ArF photoresists: (a) initial state, (b) after Ar-neutral-beam irradiation at , (c) after Ar ion and UV/VUV-photon irradiation at , (d) after Ar-neutral-beam irradiation at , and (e) after Ar-ion and UV/VUV-photon irradiation at .
rms roughness of ArF photoresist films before and after irradiation.
FTIR spectrum of initial ArF photoresist film.
FTIR spectra in the C-H region before and after (a) Ar-neutral-beam irradiation at and , (b) Ar-ion and UV/VUV-photon irradiations at and , (c) -neutral-beam irradiation at , and (d) Cl-ion and UV/VUV-photon irradiations at .
FTIR spectra in the region before and after (a) Ar-neutral-beam irradiation at and , (b) Ar-ion and UV/VUV-photon irradiations at and , (c) -neutral-beam irradiation at , and (d) -ion and UV/VUV-photon irradiation at .
Experimental conditions. Neutral-beam irradiation can be obtained by using AR10 apertures and ion and UV/VUV photon irradiation can be obtained by using AR2 apertures.
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