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Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation
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10.1063/1.3089245
/content/aip/journal/jap/105/5/10.1063/1.3089245
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/5/10.1063/1.3089245

Figures

Image of FIG. 1.
FIG. 1.

Schematic of neutral-beam source we developed.

Image of FIG. 2.
FIG. 2.

Schematic of different AR apertures: (a) AR10 and (b) AR2.

Image of FIG. 3.
FIG. 3.

VUV intensities obtained with AR10 (Neutral beam) and AR2 apertures (Ion+UV/VUV photon).

Image of FIG. 4.
FIG. 4.

Neutral beams and ion fluxes estimated from rise in surface temperature during irradiation. Incident energies of both neutral beams and ions are about 10 eV.

Image of FIG. 5.
FIG. 5.

Surface temperature during irradiation.

Image of FIG. 6.
FIG. 6.

Structures of ArF photoresist polymer and PAG we used. The base polymer was a polymethacrylate copolymer of -GBLMA, MAMA, and HAdMA, which were, respectively, the lactone, protecting, and polar groups. The PAG was TPS-OTf.

Image of FIG. 7.
FIG. 7.

Etching rates for ArF photoresist films.

Image of FIG. 8.
FIG. 8.

SPM images showing the surface roughness of ArF photoresists: (a) initial state, (b) after Ar-neutral-beam irradiation at , (c) after Ar ion and UV/VUV-photon irradiation at , (d) after Ar-neutral-beam irradiation at , and (e) after Ar-ion and UV/VUV-photon irradiation at .

Image of FIG. 9.
FIG. 9.

rms roughness of ArF photoresist films before and after irradiation.

Image of FIG. 10.
FIG. 10.

FTIR spectrum of initial ArF photoresist film.

Image of FIG. 11.
FIG. 11.

FTIR spectra in the C-H region before and after (a) Ar-neutral-beam irradiation at and , (b) Ar-ion and UV/VUV-photon irradiations at and , (c) -neutral-beam irradiation at , and (d) Cl-ion and UV/VUV-photon irradiations at .

Image of FIG. 12.
FIG. 12.

FTIR spectra in the region before and after (a) Ar-neutral-beam irradiation at and , (b) Ar-ion and UV/VUV-photon irradiations at and , (c) -neutral-beam irradiation at , and (d) -ion and UV/VUV-photon irradiation at .

Tables

Generic image for table
Table I.

Experimental conditions. Neutral-beam irradiation can be obtained by using AR10 apertures and ion and UV/VUV photon irradiation can be obtained by using AR2 apertures.

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/content/aip/journal/jap/105/5/10.1063/1.3089245
2009-03-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/5/10.1063/1.3089245
10.1063/1.3089245
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