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The current relaxation behavior of Li doped thick film interdigitated capacitors
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10.1063/1.3055341
/content/aip/journal/jap/105/6/10.1063/1.3055341
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3055341

Figures

Image of FIG. 1.
FIG. 1.

XRD scans in radiation for Li doped thick films on the alumina substrates.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics for Li doped thick film interdigited capacitors on the alumina substrates with an elevated temperature. The finger gap is and delay time is 60 s.

Image of FIG. 3.
FIG. 3.

Temperature dependent variation of resistivity of Li doped thick film interdigited capacitors on the alumina substrates.

Image of FIG. 4.
FIG. 4.

Transient current recorded in time domain for Li doped thick film interdigited capacitors on the alumina substrates.

Image of FIG. 5.
FIG. 5.

Straight fitting line in the scale corresponds to the Curie–von Schweindler power low for Li doped thick film interdigited capacitors on the alumina substrates.

Tables

Generic image for table
Table I.

Fitting value of transient current recorded in time domain for Li doped thick film interdigited capacitors.

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/content/aip/journal/jap/105/6/10.1063/1.3055341
2009-03-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The current relaxation behavior of Li doped 0.7(Ba,Sr)TiO3–0.3MgO thick film interdigitated capacitors
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3055341
10.1063/1.3055341
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