Schematic figure of the rf sputtering apparatus forming ZnO thin films.
Schematic figure of the off-axis sputtering apparatus.
XRD results of ZnO on , on , and on .
FWHM of ZnO (002) peaks and Au (111) peaks.
XRD patterns of ZnO thin films on Pt/Al and an Al bottom layer.
Rocking curve of XRD around the angle of the ZnO (002) peaks.
Cross-section TEM of a ZnO/Au interface.
Cross-section TEM of a ZnO/Pt interface.
Cross-section TEM of ZnO/Al interface.
Thickness uniformity at and in off-axis sputtering.
FWHMs of a rocking curve at AlN (002).
Residual stress and AlN(0002) FWHM on Pt/Ti/Si substrates at and as a function of the following parameters; rf power, dc bias voltage to the substrate, and gas pressure.
Relationship between the resonant resistance and ZnO FWHM XRD rocking curve for various buffer metals.
Typical resonant characteristics of a BAW resonator with structure.
Resonant characteristics of a BAW resonator with structure.
Frequency characteristics of a 5 GHz ZnO BAW filter that has a ladder structure with five resonators.
Experimental result for TCF at the ratio of (sputtered )/(total ) when the thicknesses of upper and the ZnO thin films are fixed.
Temperature characteristics of frequency in an 870 MHz BAW resonator under the optimum thickness ratio.
Schematic figure of a 3.58 MHz contour mode piezoelectric resonator.
Frequency characteristics of impedance and phase in a 3.58 MHz piezoelectric resonator that is made using the sputtered ZnO thin film on fabricated Elinvar.
Temperature characteristics of frequency in a 3.58 MHz contour mode resonator.
Electrical characteristics of AlN BAW resonators at each resonant frequency.
Typical conditions for making -axis oriented ZnO thin films.
Sputtering conditions for forming oriented AlN.
Calculated electrical characteristics of BAW resonators excluding the parasitic components from the measurement data.
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