Schematic structure of the OTFT devices with different dielectric layers: (a) pristine PTFAM and (b) .
Electrical properties of OTFTs with different gate dielectrics. Output characteristics: (a) pristine PTFMA; (b) PTFMA coated with . Transfer characteristics: (c) pristine PTFMA; (d) PTFMA coated with . The gate voltage is swept at a constant drain-source voltage . Inset: AFM images of pentacene film topography grown on polymeric dielectrics.
Schematic energy level diagram for illustrating the interface between gate insulators and pentacene in top-contact devices: (a) with and (b) without dipole effect on the gate dielectric/pentacene interface. The “” and “−“ denote the hole and electron, respectively.
Hysteresis in transfer characteristics of the based OTFT. The solid arrow and the dotted arrow indicate the forward and backward sweep, respectively. The gate voltage was swept at a constant drain-source and gate voltage: . Inset: the normalized source-drain current degradation as a function of time after stress.
Gate dielectric thin-film surface characteristics.
Electrical performance parameters for OTFTs with different gate dielectrics (note: the side-chain groups are for gate dielectrics).
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