1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling
Rent:
Rent this article for
USD
10.1063/1.3079518
/content/aip/journal/jap/105/6/10.1063/1.3079518
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3079518

Figures

Image of FIG. 1.
FIG. 1.

characteristics of DG MOSFETs with and fabricated on (110) silicon surface at and 0.05 V, respectively.

Image of FIG. 2.
FIG. 2.

Evolution of the relative increase in due to wave function penetration with the downscaling of at off and on states.

Image of FIG. 3.
FIG. 3.

Evolution of the relative increase in due to wave function penetration with the scaling of at the (a) on state and (b) off state.

Image of FIG. 4.
FIG. 4.

Effects of wave function penetration on the conduction-band edge profile along the direction and on an eigenenergy at the subband barrier height in an arbitrary DG MOSFET. The source Fermi level is the energy reference.

Image of FIG. 5.
FIG. 5.

Evolution of and at the (a) on state and (b) off state with the downscaling of .

Image of FIG. 6.
FIG. 6.

Evolution of the relative increase in at off and on states due to wave function penetration with the scaling of .

Image of FIG. 7.
FIG. 7.

Evolution of and with the scaling of at the (a) off state and (b) on state.

Image of FIG. 8.
FIG. 8.

Impact of simultaneous scaling of and on wave function penetration effect on (a) and (b) .

Tables

Generic image for table
Table I.

Effective electron masses in different valleys in (110) silicon.

Generic image for table
Table II.

Impact of simultaneous scaling of and on the wave function penetration effects on .

Loading

Article metrics loading...

/content/aip/journal/jap/105/6/10.1063/1.3079518
2009-03-19
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3079518
10.1063/1.3079518
SEARCH_EXPAND_ITEM