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Surface and interface reactions of sputtered TiNi/Si thin films
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10.1063/1.3082126
/content/aip/journal/jap/105/6/10.1063/1.3082126
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3082126

Figures

Image of FIG. 1.
FIG. 1.

RBS spectra of as-deposited films.

Image of FIG. 2.
FIG. 2.

RBS spectra of films annealed to 500 and .

Image of FIG. 3.
FIG. 3.

RBS spectra of silicon (substrate) edge at different annealing temperatures.

Image of FIG. 4.
FIG. 4.

GI-XRD of TiNi films annealed to 500 and .

Image of FIG. 5.
FIG. 5.

(a) SIMS spectrum of 1 h deposited (450 nm) thin film and (b) SIMS spectrum of 3 h deposited (1800 nm) thick film.

Image of FIG. 6.
FIG. 6.

SIMS analysis of surface layer of TiNi film showing Ni depletion at various annealing temperatures: (a) , (b) , (c) , and (d) .

Image of FIG. 7.
FIG. 7.

SIMS depth profile at the interface of films deposited at for (a) 1 h and (b) 3 h duration.

Image of FIG. 8.
FIG. 8.

SIMS depth profile of Ti, Ni, and Si at the interface of films annealed at various temperatures: (a) , (b) , (c) , and (d) .

Image of FIG. 9.
FIG. 9.

Schematic representation of the reaction products across the thickness of the TiNi film.

Image of FIG. 10.
FIG. 10.

Gaussian fits to the Ni depth profile at the interface in the TiNi films annealed to different temperatures.

Image of FIG. 11.
FIG. 11.

Thickness of reaction products at interface (FWHM) plotted against temperature.

Image of FIG. 12.
FIG. 12.

Plot of vs for the different stable phases of TiNi.

Image of FIG. 13.
FIG. 13.

Plot of vs showing two different growth rates.

Tables

Generic image for table
Table I.

Heats of formation of different Ni–Si compounds.

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/content/aip/journal/jap/105/6/10.1063/1.3082126
2009-03-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface and interface reactions of sputtered TiNi/Si thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3082126
10.1063/1.3082126
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