RBS spectra of as-deposited films.
RBS spectra of films annealed to 500 and .
RBS spectra of silicon (substrate) edge at different annealing temperatures.
GI-XRD of TiNi films annealed to 500 and .
(a) SIMS spectrum of 1 h deposited (450 nm) thin film and (b) SIMS spectrum of 3 h deposited (1800 nm) thick film.
SIMS analysis of surface layer of TiNi film showing Ni depletion at various annealing temperatures: (a) , (b) , (c) , and (d) .
SIMS depth profile at the interface of films deposited at for (a) 1 h and (b) 3 h duration.
SIMS depth profile of Ti, Ni, and Si at the interface of films annealed at various temperatures: (a) , (b) , (c) , and (d) .
Schematic representation of the reaction products across the thickness of the TiNi film.
Gaussian fits to the Ni depth profile at the interface in the TiNi films annealed to different temperatures.
Thickness of reaction products at interface (FWHM) plotted against temperature.
Plot of vs for the different stable phases of TiNi.
Plot of vs showing two different growth rates.
Heats of formation of different Ni–Si compounds.
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