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Optical properties of -plane InGaN/GaN multiple quantum wells on -plane sapphire substrates with different indium compositions
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View: Figures


Image of FIG. 1.
FIG. 1.

The power-dependent PL measurement of the four samples, (a) the emission wavelength vs the pumping power and (b) the PL intensity vs the pumping density and fitted based on the relation .

Image of FIG. 2.
FIG. 2.

The PL emission spectra under temperature varied from 1 to 300 K. (a) –(d) imply the samples with In compositions varied from 9% to 30%.

Image of FIG. 3.
FIG. 3.

The summary of the temperature-dependent PL results of the four samples with different In compositions. (a) shows the emission wavelength and difference between high and low emission peaks, (b) shows the FWHM of the dominate and high energy peaks, and (c) shows the dominate wavelength shift from 20 to 300 K.

Image of FIG. 4.
FIG. 4.

The normalized PL intensity plotted as a function of for the samples with different In compositions. The symbols stand for the measurement results and the solid line means the fitted curve of the four samples. The number labeled near the curves represents the fitted activation energies.

Image of FIG. 5.
FIG. 5.

The measured lifetime of and peaks for samples with different In compositions at 15 K. The inset shows the measured PL spectra of the four samples.

Image of FIG. 6.
FIG. 6.

Top view cathodoluminescence images of -plane InGaN/GaN MQWs with different In compositions at corresponding dominate emission peak wavelengths.

Image of FIG. 7.
FIG. 7.

The DOP plotted as the function of In compositions at 20 and 300 K, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions