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Ultrathin amorphization of single-crystal silicon by ultraviolet femtosecond laser pulse irradiation
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10.1063/1.3087754
/content/aip/journal/jap/105/6/10.1063/1.3087754
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3087754

Figures

Image of FIG. 1.
FIG. 1.

Schematic of imaging pump-probe measurement system with 267 nm pump. M is a dielectric mirror, pl is a thin film polarizer, and is a half wave plate.

Image of FIG. 2.
FIG. 2.

Reflectivity of the liquid Si surface as a function of the liquid Si thickness.

Image of FIG. 3.
FIG. 3.

LSM images of the processed Si surface by a single shot of 267 nm femtosecond laser irradiation. is a polarization of laser.

Image of FIG. 4.
FIG. 4.

Cross sectional TEM images of the center of processed area with single pulse irradiation.

Image of FIG. 5.
FIG. 5.

Cross sectional TEM images of the (a) center and the (b) edge of the processed area with single pulse irradiation.

Image of FIG. 6.
FIG. 6.

Variation in the amorphized area size as a function of the laser peak fluence.

Image of FIG. 7.
FIG. 7.

Temporal change in the reflective images in the processed area after single shot laser irradiation. Peak fluence of the pump laser pulse was .

Image of FIG. 8.
FIG. 8.

Variation in the reflectivity in the center of the processed area in Fig. 7.

Tables

Generic image for table
Table I.

Refractive index of the native oxide, liquid Si, and for 800 nm.

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/content/aip/journal/jap/105/6/10.1063/1.3087754
2009-03-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin amorphization of single-crystal silicon by ultraviolet femtosecond laser pulse irradiation
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3087754
10.1063/1.3087754
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