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Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
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10.1063/1.3094022
/content/aip/journal/jap/105/6/10.1063/1.3094022
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3094022

Figures

Image of FIG. 1.
FIG. 1.

Intensity distribution around XRD reflections [(a) and (b)] (0002) reflections and [(c) and (d)] (−1−124) reflections for heterostructures grown on [(a) and (c)] thin substrates and [(b) and (d)] thick substrates.

Image of FIG. 2.
FIG. 2.

(a) Raman spectra for different depth scans [points 1–5 in (b)] of an structure grown on a thick sapphire substrate (3 mm) (curves 1–4). Curve 5—Raman spectrum measured from the back side of this structure: and . (b) Measurement configuration using the axial focal spot of the laser beam from the front (points 1–4) and back side (point 5) of the investigated structure.

Image of FIG. 3.
FIG. 3.

(a) Frequencies and the FWHM of the (GaN) phonon mode vs the excitation depth for the structure (Fig. 2), plotted as a function of the ratio of intensities . (b) Raman spectra for the phonon mode of the sapphire substrate under excitation from the nitride layers side (curve 1) and back side (curve 2) of the investigated structure.

Image of FIG. 4.
FIG. 4.

[(a) and (b)] Raman spectra of the structure grown on a thin sapphire substrate measured at excitation from the nitride layers side (curve 1) and back side (curve 2) at depths shown schematically by drawn points 1 and 2 in (c), respectively: and .

Tables

Generic image for table
Table I.

Structural parameters obtained from the XRD data.

Generic image for table
Table II.

Macrodeformation and curvature radius of the GaN layers.

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/content/aip/journal/jap/105/6/10.1063/1.3094022
2009-03-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/6/10.1063/1.3094022
10.1063/1.3094022
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