Visible emission originated from SS glass (a) and STS glass (b), respectively, excited by 320 nm. Each emission spectrum is decomposed into two Gaussian functions.
Excitation and emission spectra monitored for the -free and doped STS glass. The emission spectra of -free and 2 mol% doped SS glass under 320 nm excitation are also given for comparison.
Temperature dependent emission spectra of the silicon-oxygen-related defect under 320 nm excitation. The inset shows the normalized integral intensity of visible emission (green circle) and infrared emission (red square) as a function of temperature.
Time-resolved emission spectra of the infrared emission under 320 nm excitation at 15 K.
Luminescence decay curves of silicon-oxygen-related defect in -free STS glass (a) and doped STS glass (b), respectively, under 320 nm excitation at different temperatures.
Temperature dependent energy transfer rate in the doped STS glass.
Luminescence decay curves of the defects emission at 520 nm under 320 nm excitation.
concentration dependent energy transfer efficiency.
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