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Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures
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10.1063/1.3068418
/content/aip/journal/jap/105/7/10.1063/1.3068418
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3068418
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the junction resistance and (Ga,Mn)As single layer resistance in zero field. Inset shows the schematic of the junction pattern and measurement geometry.

Image of FIG. 2.
FIG. 2.

Typical junction resistance vs magnetic field in the field range of 2000 Oe at 10 K; forward corresponds to sweeping field from negative to positive and backward vice versa.

Image of FIG. 3.
FIG. 3.

Minor loops in the switching field range of the (Ga,Mn)As layer were measured at , 15, 20, and 25 K, respectively.

Image of FIG. 4.
FIG. 4.

Junction resistance and TMR ratio vs direct sense current at 10 K. Inset of (b) shows TMR ratio dependence of dc bias.

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/content/aip/journal/jap/105/7/10.1063/1.3068418
2009-02-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3068418
10.1063/1.3068418
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