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Temperature dependence of the junction resistance and (Ga,Mn)As single layer resistance in zero field. Inset shows the schematic of the junction pattern and measurement geometry.
Typical junction resistance vs magnetic field in the field range of 2000 Oe at 10 K; forward corresponds to sweeping field from negative to positive and backward vice versa.
Minor loops in the switching field range of the (Ga,Mn)As layer were measured at , 15, 20, and 25 K, respectively.
Junction resistance and TMR ratio vs direct sense current at 10 K. Inset of (b) shows TMR ratio dependence of dc bias.
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