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Effects of carrier mobility and morphology in organic semiconductor spin valves
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Chemical structure of . (b) curves taken at , 120, and 290 K for a junction. (c) Magnetotransport data at with . (d) Bias dependence of MR taken at and 120 K. The maximum observed MR is 9.5% at and 5.7% at .

Image of FIG. 2.
FIG. 2.

(a) Chemical structure of CuPc. (b) curves at and 290 K for a CuPc-based device. (c) Magnetotransport data taken at with . (d) Bias dependence of MR at , 80, and 120 K. Maximum MRs are 6.4%, 3.2%, and 1.8% at these three temperatures, respectively.

Image of FIG. 3.
FIG. 3.

Temperature dependence of maximum observed MR for two junctions based on and CuPc, respectively. The MRs for each sample are normalized to their values at .

Image of FIG. 4.
FIG. 4.

[(a) and (c)] Chemical structures of PTCDA and . [(b) and (d)] Magnetotransport data taken at for junctions based on PTCDA and , respectively.

Image of FIG. 5.
FIG. 5.

[(a)–(c)] AFM images of , CuPc, and PTCDA films on top of 25 nm Fe layers, respectively. The images were scanned over areas via tapping mode. The PTCDA film has a much rougher surface than the and CuPc films.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of carrier mobility and morphology in organic semiconductor spin valves