Dual-magnetic-free-layer MR sensor structure.
(a) Transfer curve for −1 to applied field. Resistance normalized to orthogonal state resistance calculated from . (b) FL time traces at AP (−1 kOe) state. (c) FL time traces at P state.
(a) Normalized spectrum of sensor resistance fluctuation at 0 Oe. [(b) and (c)] Normalized spectrum of component of FL-1 and FL-2 at 0 Oe. (d) Magnetization states of the two FL at 0 Oe. (e) Sensor noise power (0–1 GHz) normalized to 0 Oe resistance vs transverse field. (f) noise power of FL-1 and FL-2 vs transverse field.
(a) Transfer curves at 0–200 Oe interlayer coupling fields. (b) Sensor noise power along the transfer curves in (a). (c) SNR under the three coupling fields. (d) Sensor resistance noise spectrum under each coupling field at 0 Oe transverse field. [(e) and (f)] Corresponding noise spectra of FL-1 and FL-2 at 0 Oe transverse field.
(a) Noise spectra of DFL sensor with (gray) and without (dark) edge slopes at 0 Oe field. [(b) and (c)] Corresponding FL noise spectra. (d) Magnetization state of DFL sensor with edge slope—5 nm wider for FL-2. (e) Transfer curves and (f) SNR for with/without edge slope cases.
(a) Noise power (0 Oe, 0–1 GHz) vs signal (200 Oe) power for DFL and HB structures. (b) Corresponding SNR.
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