Mn (Left) and Ar (right) depth distributions within the InAs layer after implantation as simulated by the TRIM Monte Carlo code (Ref. 17).
Temperature dependence of the magnetization at constant field for the reference (black stairs), Mn-implanted (black circles), Mn-RTA (open circles), Ar-implanted (black squares), and Ar-RTA (open squares) samples.
Logarithmic scale picture of the XRD patterns for the reference (black dashed line), Mn-implanted (crosses), Mn-RTA (black dots), Ar-implanted (stairs), and Ar-RTA (transversal black lines) samples. The insets show a zoom of the (200) InAs peak for all the previously described layers. The black line placed in the insets at corresponds to the diffraction angle for an ideal bulk InAs sample.
Magnetization vs field reversal measured at 5 K (right) and 300 K (left) for reference (black stairs), Mn-implanted (black circles), Mn-RTA (open circles), Ar-implanted (black squares), and Ar-RTA (open squares) samples.
PIXE angular scan curves along the (right) and (left) axes of the (crosses), (black circles), and (open circles) lines for the reference, as-grown, (top graphs), Mn-implanted (middle graphs), and Mn-RTA (bottom graphs) layers.
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