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Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation
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10.1063/1.3088872
/content/aip/journal/jap/105/7/10.1063/1.3088872
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3088872
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRR measurement of a sample treated with for 30 s after HF-Dip. Fitted silicon oxide model yields .

Image of FIG. 2.
FIG. 2.

AFM measurements of surface roughness after treatment of different durations.

Image of FIG. 3.
FIG. 3.

ME-IRRAS investigations on the oxidation process of an H-terminated silicon surface: (a) removal of and Si–H after 300 s ozone exposure and (b) Si–O vibration resulting after ozone exposure (gray line) and treatment (black line).

Image of FIG. 4.
FIG. 4.

Position of the LO mode peak maximum with respect to oxide thickness.

Image of FIG. 5.
FIG. 5.

Ex situ XPS on a Si–H surface modified by ozone exposure and treatment, respectively.

Image of FIG. 6.
FIG. 6.

Comparison of the oxide growth kinetics on a hydrogen terminated silicon surface, induced by treatment and ozone exposure, respectively.

Image of FIG. 7.
FIG. 7.

Asymmetric stretching Si–O–Si vibration infrared spectra of a RCA-cleaned silicon wafer before and after different treatment times in (-polarization, 74°).

Image of FIG. 8.
FIG. 8.

Oxide thickness as a function of plasma treatment duration . The values marked by circles are calculated from XPS spectra, while the line represents the fit function

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/content/aip/journal/jap/105/7/10.1063/1.3088872
2009-04-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3088872
10.1063/1.3088872
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