XRR measurement of a sample treated with for 30 s after HF-Dip. Fitted silicon oxide model yields .
AFM measurements of surface roughness after treatment of different durations.
ME-IRRAS investigations on the oxidation process of an H-terminated silicon surface: (a) removal of and Si–H after 300 s ozone exposure and (b) Si–O vibration resulting after ozone exposure (gray line) and treatment (black line).
Position of the LO mode peak maximum with respect to oxide thickness.
Ex situ XPS on a Si–H surface modified by ozone exposure and treatment, respectively.
Comparison of the oxide growth kinetics on a hydrogen terminated silicon surface, induced by treatment and ozone exposure, respectively.
Asymmetric stretching Si–O–Si vibration infrared spectra of a RCA-cleaned silicon wafer before and after different treatment times in (-polarization, 74°).
Oxide thickness as a function of plasma treatment duration . The values marked by circles are calculated from XPS spectra, while the line represents the fit function
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