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The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor
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View: Figures


Image of FIG. 1.
FIG. 1.

Basic structure of a -channel MOSFET with electrons removed from the interface due to the quantum-confinement effect.

Image of FIG. 2.
FIG. 2.

Random motion in zero-field transforms to a streamlined one as extremely high electric fields are encountered.

Image of FIG. 3.
FIG. 3.

The populated valley (filled) with quantum confinement in the -direction with projection on the plane with isotropic effective mass .

Image of FIG. 4.
FIG. 4.

The ultimate saturation velocity as a function of gate voltage. Also shown are the drain velocity and the effect of the quantum emission between the quantized levels.

Image of FIG. 5.
FIG. 5.

Electric field profile (dotted) with partial saturation and that (solid) with full saturation .

Image of FIG. 6.
FIG. 6.

The ratio of the drain velocity as a function of drain voltage beyond the onset of saturation for (topmost curve), 0.8, 0.9, 1.0, 1.1, and 1.2 (bottom curve).

Image of FIG. 7.
FIG. 7.

characteristics of an 80 nm MOSFET for gate voltages , 0.8, 0.9, 1.0, 1.1, and 1.2. The solid lines are from Eq. (23) in the range of . The dotted lines are from Eq. (30) and are extension for . The solid lines are for .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor