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Electronic structure of amorphous silicon oxynitride with different compositions
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10.1063/1.3103311
/content/aip/journal/jap/105/7/10.1063/1.3103311
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3103311
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental x-ray photoelectron spectra of the core level in Si, , and .

Image of FIG. 2.
FIG. 2.

Bottom: Distribution function of tetrahedral multiplied by the charge on Si atom plotted as a function of the chemical composition of the film. Top: Charge on Si atom being averaged over all configurations of the tetrahedral. The markers are experimental data taken from the report by Vogl et al. (Ref. 21) and curves are the theoretical results based on present calculations.

Image of FIG. 3.
FIG. 3.

The energy positions of the top of the valence band and the bottom of the conduction band in the films with different compositions. The curves are the present calculation results and the markers are the experimental data taken from various sources: one-electron photoemission from Si (Ref. 25), two-electron photoemission from Al in MOS devices (Ref. 26), three-optical absorption (Ref. 26), four-optical absorption (Ref. 27), five-optical absorption (Ref. 28), and hole photoemission from Si (Ref. 29).

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/content/aip/journal/jap/105/7/10.1063/1.3103311
2009-04-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic structure of amorphous silicon oxynitride with different compositions
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3103311
10.1063/1.3103311
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