characterizations of ITO/CuPc (40 nm)/BCP (0, 8, 10, 20 nm)/Ag (100 nm) cells under AM 1.5 solar illumination at a light intensity of . The solid lines are fits of experimental curves from an improved circuit model. Inset: schematic structure and energy level diagram of the devices.
Effect of BCP layer thickness on (a) short-circuit current density and power conversion efficiency and (b) open-circuit voltage and FF.
Optical index and extinction coefficient of CuPc, , and BCP.
(a) The normalized electric field distribution of the devices with the structure ITO/CuPc (40 nm)/BCP (0, 5, 8, 10, 20, 30 nm)/Ag (100 nm). (b) Absorbing efficiency and exciton diffraction efficiency of the devices.
The relationship of applied voltage between charge-transfer efficiency and carrier collection efficiency of the cells with . The solid lines are fitted curves from the improved circuit model. Inset: improved equivalent model for organic solar cell.
Square root of the current density of photovoltaic cells with a configuration of ITO/CuPc (40 nm)/BCP (20, 30 nm)/Ag (100 nm) as a function of applied voltage. The inner figure shows that is linear with when is 11.4 nm.
Photovoltaic parameters extracted from the improved equivalent circuit model with a structure of ITO/CuPc (40 nm)/BCP (0, 5, 8, 10 nm)/Ag (100 nm). of the devices with are 14.13 and .
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