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Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP
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10.1063/1.3103332
/content/aip/journal/jap/105/7/10.1063/1.3103332
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3103332
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of the grown structure.

Image of FIG. 2.
FIG. 2.

Comparison of PL intensities for uncapped samples grown and postannealed at for 30 s with a MSL (solid lines) and without a MSL from Ref. 8 (dashed lines).

Image of FIG. 3.
FIG. 3.

Bright field XTEM micrographs comparison of unannealed samples grown: (a) on metamorphic pseudosubstrate and (b) directly on an InP substrate (Ref. 8).

Image of FIG. 4.
FIG. 4.

(a) PL intensity of as-grown samples and after annealing at for uncapped samples grown on a MSL, with and without the underlying LT-InP buffer layer. (b) PL wavelength change of samples after annealing with and without LT-InP cap layer grown with no MSL, i.e., directly on an InP substrate (from Ref. 8), on an InAsP MSL, and on a MSL with an underlying LT-InP buffer.

Image of FIG. 5.
FIG. 5.

PL intensity as a function of annealing temperature for samples grown on a MSL with LT-InP cap layer and with and without LT-InP buffer layer.

Image of FIG. 6.
FIG. 6.

Fitted EDX profiles of MSL/LT-InP buffer samples showing the evolution of the arsenic distribution in the QW for 30 s annealing annealed at various temperatures for (a) uncapped samples and (b) samples capped with LT-InP.

Image of FIG. 7.
FIG. 7.

Changes in (a) QW thickness and (b) As concentration in the QW with the annealing temperature for samples without (black dashed) and with (black solid) LT cap layer with LT-InP buffer layer and a MSL. Data for samples grown without MSL (from Ref. 8) shown for comparison (gray lines).

Image of FIG. 8.
FIG. 8.

(a) shows the evolution with time of the arsenic distribution in the QW for LT-InP uncapped and capped samples annealed at . (b) shows the square of the diffusion length vs the annealing time for samples annealed at without (gray) and with LT-InP cap (black). (c) is an Arrhenius plot of the diffusion coefficients obtained from EDX profiling without (gray) and with LT-InP cap (black). The extracted diffusion coefficients, activation energies, and diffusivities are given.

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/content/aip/journal/jap/105/7/10.1063/1.3103332
2009-04-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3103332
10.1063/1.3103332
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