Cross-sectional TEM image of the grown structure.
Comparison of PL intensities for uncapped samples grown and postannealed at for 30 s with a MSL (solid lines) and without a MSL from Ref. 8 (dashed lines).
Bright field XTEM micrographs comparison of unannealed samples grown: (a) on metamorphic pseudosubstrate and (b) directly on an InP substrate (Ref. 8).
(a) PL intensity of as-grown samples and after annealing at for uncapped samples grown on a MSL, with and without the underlying LT-InP buffer layer. (b) PL wavelength change of samples after annealing with and without LT-InP cap layer grown with no MSL, i.e., directly on an InP substrate (from Ref. 8), on an InAsP MSL, and on a MSL with an underlying LT-InP buffer.
PL intensity as a function of annealing temperature for samples grown on a MSL with LT-InP cap layer and with and without LT-InP buffer layer.
Fitted EDX profiles of MSL/LT-InP buffer samples showing the evolution of the arsenic distribution in the QW for 30 s annealing annealed at various temperatures for (a) uncapped samples and (b) samples capped with LT-InP.
Changes in (a) QW thickness and (b) As concentration in the QW with the annealing temperature for samples without (black dashed) and with (black solid) LT cap layer with LT-InP buffer layer and a MSL. Data for samples grown without MSL (from Ref. 8) shown for comparison (gray lines).
(a) shows the evolution with time of the arsenic distribution in the QW for LT-InP uncapped and capped samples annealed at . (b) shows the square of the diffusion length vs the annealing time for samples annealed at without (gray) and with LT-InP cap (black). (c) is an Arrhenius plot of the diffusion coefficients obtained from EDX profiling without (gray) and with LT-InP cap (black). The extracted diffusion coefficients, activation energies, and diffusivities are given.
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