Molecules used in this study. (B- benz), (D-benz), (M-benz), (N-benz), (2M 4N-benz), (2MO 4N-benz). The ideal surface bonding is shown schematically.
AFM images of lightly doped (a) and heavily doped (b) hydrogen-terminated silicon wafers. The steps in (a) correspond to individual planes of Si atoms. The root-mean-square roughnesses of the images are 1.1 and , respectively.
AFM images of B-benz (a), D-benz (b), M-benz (c), and N-benz (d) on -type Si. Atomic step edges are still visible in (a)–(c), whereas (d) exhibits much less-ideal topography.
XPS survey spectra of hydrogen-terminated and representative molecular samples. All spectra are shown in arbitrary units (A.U.).
Br high-resolution XPS of Br region of B-benz sample showing characteristic doublet consistent with carbon-bound bromine.
N spectra of nitro-substituted molecular layers. The peak near is attributed to . The peaks in the vicinity of are attributed to species which are formed by reduction of the nitro headgroup.
High-resolution XPS of the Si region for hydrogen-terminated and molecular samples.
Angle-resolved XPS of Si region for molecular layers exhibiting high and low degrees of substrate oxidation. The takeoff angle was varied from 0° to 75°.
As-measured high-resolution XPS of the C region for hydrogen-terminated and molecular samples.
Spectra illustrating the contamination correction procedure. The dots are measured spectra and solid lines are fits. The two peaks labeled “contamination” are attributed to hydrocarbon, while the two other peaks are attributed to C–C and C–Br species.
XPS of the C region for molecular samples corrected to remove contribution from hydrocarbon contamination.
Transmission infrared spectra of N-benz, 2M 4N-benz, and 2MO 4N-benz.
Infrared spectra of as deposited (transmission) and metallized N-benz on Si. Cu significantly alters the molecular spectrum, whereas molecular features are preserved after Au deposition.
Comparison of infrared and inelastic electron tunneling spectroscopies of -benz/Si structures.
Quantity of silicon oxide for various molecular layers as calculated from Si XPS peaks.
Calculated and ellipsometrically measured thicknesses of molecular layers
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