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Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties
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10.1063/1.3103771
/content/aip/journal/jap/105/7/10.1063/1.3103771
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3103771

Figures

Image of FIG. 1.
FIG. 1.

Atomic displacement depth profile obtained by SRIM2003 simulations (Ref. 18) of 4 MeV Au (solid line) and 4 MeV Xe (dashed line) ion irradiated SiC at a fluence of .

Image of FIG. 2.
FIG. 2.

Indentation load-displacement curves of single crystals: virgin (full squares) and RT 4 MeV Au ion irradiated at a fluence of (open circles).

Image of FIG. 3.
FIG. 3.

RBS/C spectra recorded on single crystals before and after irradiation at various fluences with 4 MeV Au ions at RT. Solid lines are fits with the MCCHASY simulation code (Ref. 20).

Image of FIG. 4.
FIG. 4.

Disordered fraction vs depth for RT 4 MeV Au ion irradiated single crystals at various fluences (simulations with the MCCHASY code) (Ref. 20). The dotted line is the normalized vacancy profile computed with SRIM2003 (Ref. 18).

Image of FIG. 5.
FIG. 5.

Disordered fraction for RT 4 MeV Au ion irradiated single crystals vs fluence and dose: measured at 600 nm (open circles) and 300 nm (open squares), with the least-squares fits to the DI [Eq. (2)] (solid lines) and the two-step MSDA models [Eq. (3)] (dashed lines).

Image of FIG. 6.
FIG. 6.

RBS/C spectra recorded on single crystals before and after irradiation at various fluences with 4 MeV Au ions at . Solid lines are fits with the MCCHASY simulation code (Ref. 20).

Image of FIG. 7.
FIG. 7.

Disordered fraction vs depth for 4 MeV Au ion irradiated single crystals at various fluences (simulations with the MCCHASY code) (Ref. 20). The dotted line is the normalized vacancy profile computed with SRIM2003 (Ref. 18).

Image of FIG. 8.
FIG. 8.

Disordered fraction versus depth for 4 MeV Au ion irradiated single crystals vs fluence and dose: measured at 600 nm (open circles, linear regression) and 300 nm (open squares, least-squares fit to the DI model).

Image of FIG. 9.
FIG. 9.

Young’s modulus (open circles) and Berkovich hardness (full squares) of RT 4 MeV Au ion irradiated single crystals vs dose.

Image of FIG. 10.
FIG. 10.

Young’s modulus (open circles) and Berkovich hardness (full squares) of RT 4 MeV Xe ion irradiated single crystals vs dose.

Image of FIG. 11.
FIG. 11.

Young’s modulus (circles) and Berkovich hardness (squares) vs dose for 4 MeV Au ion irradiated single crystals at (full symbols) and for 4 MeV Xe ion irradiated single crystals at (open symbols).

Image of FIG. 12.
FIG. 12.

Young’s modulus (circles) and Berkovich hardness (squares) of 4 MeV Au ion irradiated single crystals at RT (full symbols) and (open symbols) vs mean disordered fraction at depth between 100 and 200 nm. The solid line corresponds to Reuss’s model and the dotted one to Voigt’s model.

Image of FIG. 13.
FIG. 13.

Out-of-plane expansion of RT 4 MeV Au (full squares) and 4 MeV Xe (open circles) ion irradiated single crystals vs dose (lines are guides to the eyes).

Image of FIG. 14.
FIG. 14.

Out-of-plane expansion of 4 MeV Au ion irradiated single crystals at (full squares) and for 4 MeV Xe ion irradiated single crystals at (open circles) vs dose (the straight line is a linear regression).

Image of FIG. 15.
FIG. 15.

Out-of-plane expansion of 4 MeV Au ion irradiated single crystals at RT (full squares) and (open circles) vs mean disordered fraction over the mean projected range . The solid line corresponds to Reuss’s model and the dashed one to Voigt’s model.

Image of FIG. 16.
FIG. 16.

Calculations of the upper (open circles) and lower (open squares) boundaries of the Poisson’s ratio of irradiated single crystals vs amorphous fraction (the lines are guides to the eyes) [Eq. (9)].

Tables

Generic image for table
Table I.

Projected range , mean electronic stopping power , mean nuclear stopping power of ions in SiC and average number of displaced atoms per ion and per path length unit , computed with the SRIM2003 code (Ref. 18).

Generic image for table
Table II.

Parameters deduced from the single-step DI and two-step MSDA models [Eqs. (2) and (3)]: damage cross sections and saturation values of the disordered fraction .

Generic image for table
Table III.

Data on the swelling of SiC upon amorphization by heavy-ion irradiations.

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/content/aip/journal/jap/105/7/10.1063/1.3103771
2009-04-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/7/10.1063/1.3103771
10.1063/1.3103771
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