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Epitaxial 3C-SiC nanocrystal formation at the interface by combined carbon implantation and annealing in CO atmosphere
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10.1063/1.3089234
/content/aip/journal/jap/105/8/10.1063/1.3089234
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3089234
/content/aip/journal/jap/105/8/10.1063/1.3089234
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/content/aip/journal/jap/105/8/10.1063/1.3089234
2009-04-17
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3089234
10.1063/1.3089234
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