Comparison of the x-ray response of (a) CZT1, (b) CZT2, and (c) CZT3, respectively, irradiated by an uncollimated Tb x-ray source with and peak energies of 44.2 and 50.7 keV at various bias voltages. The centriod and FWHM values of the peaks are plotted for each of the detectors in (d)–(f), respectively.
Comparison of the electron mobility lifetime products fitted using the single carrier Hecht equation (Ref. 7). The are , , and for CZT1, CZT2, and CZT3, respectively.
Temporal measurements at room temperature under an applied electric field strength of 600 V/cm for CZT1, CZT2, and CZT3. The region between the dashed lines is selected for the rise time calculation. Measurements at 300 V/cm and above 1000 V/cm showed similar properties.
Typical curves of the Au/CdZnTe/Au detectors made of CZT1 (solid line), CZT2 (dotted line), and CZT3 (dashed line).
Temperature dependent -particle spectra for (a) CZT1, (b) CZT2, and (c) CZT3 measured at different applied electric field strengths.
Induced alpha pulse shapes at various applied electric field strengths at decreasing temperatures for (a) CZT1, (b) CZT2, and (c) CZT3. The plots are offset on the ordinate for clarity.
Arrhenius plot of as a function of for CZT1. The solid line is the result of fitting Eq. (2). The inset is a histogram of the detrapping time distribution at 260 K.
Properties of the doped CdZnTe detectors. and were measured at room temperature.
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