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Physical aspects of colossal dielectric constant material thin films
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10.1063/1.3106639
/content/aip/journal/jap/105/8/10.1063/1.3106639
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3106639
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical SEM (a) and TEM (b) image of CCTO thin film sample deposited by PLD.

Image of FIG. 2.
FIG. 2.

Typical temperature dependency of dielectric constant (a) and loss (b) of the CCTO thin film deposited at a substrate-target distance of 5 cm.

Image of FIG. 3.
FIG. 3.

curve (a) and curve (b) of the CCTO thin film deposited at a larger distance.

Image of FIG. 4.
FIG. 4.

Typical temperature dependency of dielectric constant (a) and loss (b) of CCTO thin film deposited at a substrate-target distance of 4.5 cm.

Image of FIG. 5.
FIG. 5.

curve (a) and curve (b) of the CCTO thin film deposited at a larger distance.

Image of FIG. 6.
FIG. 6.

The energy band diagrams of the MS (a) and MIS (b) contacts between the top electrodes and CCTO.

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/content/aip/journal/jap/105/8/10.1063/1.3106639
2009-04-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3106639
10.1063/1.3106639
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