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Studies on metal/ Schottky barrier diodes: The effects of temperature and carrier concentrations
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10.1063/1.3110065
/content/aip/journal/jap/105/8/10.1063/1.3110065
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110065

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependent forward characteristics of Pd/ SBD.

Image of FIG. 2.
FIG. 2.

Plot of ideality factor and barrier height as a function of temperature for Pd/ SBD.

Image of FIG. 3.
FIG. 3.

Barrier potential vs ideality factor for different temperatures of Pd/ SBD.

Image of FIG. 4.
FIG. 4.

Variation of effective barrier height with applied forward bias for a Pd/ SBD.

Image of FIG. 5.
FIG. 5.

Effective barrier height vs voltage plot at different carrier concentrations at 300 K.

Image of FIG. 6.
FIG. 6.

vs voltage graph at 300 K of Pd/ having carrier concentration of as .

Image of FIG. 7.
FIG. 7.

Band diagram of Pd/.

Tables

Generic image for table
Table I.

MOCVD grown Schottky barrier with different metals and alloy at 300 K having thickness of . : zero bias barrier height (from ), : ideality factor (from ), : built-in potential (from ), and : barrier height (from ).

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/content/aip/journal/jap/105/8/10.1063/1.3110065
2009-04-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Studies on metal/n-GaAs Schottky barrier diodes: The effects of temperature and carrier concentrations
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110065
10.1063/1.3110065
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