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Electrical characterization and modeling of the structures with high-quality tunnel-thin fluoride layer
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10.1063/1.3110066
/content/aip/journal/jap/105/8/10.1063/1.3110066
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110066
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM image of the surface (image size is ; the maximal height difference between the black and white points is 2.8 nm).

Image of FIG. 2.
FIG. 2.

Measured curves of fabricated MIS capacitors, completed by the data of Refs. 4 and 9–11. The lines serve as a guide for eyes.

Image of FIG. 3.
FIG. 3.

Measured and with equilibrium approach simulated curves.

Image of FIG. 4.
FIG. 4.

Individual current components.

Image of FIG. 5.
FIG. 5.

Measured and simulated within diode approach curves, reverse bias. Excessive minority carrier generation is additionally assumed.

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/content/aip/journal/jap/105/8/10.1063/1.3110066
2009-04-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110066
10.1063/1.3110066
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