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Thermal emittance and response time measurements of a GaN photocathode
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10.1063/1.3110075
/content/aip/journal/jap/105/8/10.1063/1.3110075
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110075
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured thermal emittance from GaN photocathode excited with 260 nm light for different laser spot sizes. Dashed line shows -fit to determine the slope.

Image of FIG. 2.
FIG. 2.

Measured (circles) temporal profile from GaN illuminated by 260 nm wavelength laser light. Dashed line shows Gaussian fit with . The measured width is due to the laser pulse duration.

Image of FIG. 3.
FIG. 3.

Band structure in GaAs (left) and GaN (right).

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/content/aip/journal/jap/105/8/10.1063/1.3110075
2009-04-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal emittance and response time measurements of a GaN photocathode
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/8/10.1063/1.3110075
10.1063/1.3110075
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